Technical parameters/rated power: | 2 W |
|
Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.06 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/threshold voltage: | 1 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 3.5A |
|
Technical parameters/rise time: | 8.8 ns |
|
Technical parameters/Input capacitance (Ciss): | 190pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/descent time: | 3 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.75 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9956
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC N-CH 30V 3.5A
|
||
IRF9956
|
IRF | 类似代替 |
SOIC N-CH 30V 3.5A
|
|||
IRF9956PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF9956PBF 双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
|
||
IRF9956TR
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC N-CH 30V 3.5A
|
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