Technical parameters/dissipated power: 3.7W (Ta), 43W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Technical parameters/dissipated power (Max): 3.7W (Ta), 43W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL510SPBF
|
Vishay Semiconductor | 完全替代 | SMD-220 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRL510STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRL510STRL
|
International Rectifier | 完全替代 |
MOSFET N-CH 100V 5.6A D2PAK
|
|||
|
|
Vishay Intertechnology | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRL510STRLPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRL510STRLPBF
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 5.6A D2PAK
|
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