Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 47 ns
Technical parameters/descent time: 18 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-220
External dimensions/packaging: SMD-220
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL510S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRL510STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRL510STRL
|
International Rectifier | 完全替代 |
MOSFET N-CH 100V 5.6A D2PAK
|
|||
SIHL510STRL-GE3
|
Vishay Semiconductor | 功能相似 | TO-263 |
SIHL510STRL-GE3 N-channel MOSFET Transistor, 5.6A, 100V, 2+Tab-Pin TO-263
|
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