Technical parameters/rated power: 66 W
Technical parameters/dissipated power: 66000 mW
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 66 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 66000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4RC20F
|
Infineon | 完全替代 | TO-252-3 |
IGBT 600V 22A 66W DPAK
|
||
IRG4RC20FPBF
|
Infineon | 完全替代 | TO-252-3 |
IGBT 晶体管，International Rectifier International Rectifier 提供全面的 IGBT（绝缘栅级双极性晶体管）产品组合，范围从 300V 到 1200V，采用各种技术，可最大程度降低切换和传导损耗，从而提高效率、减少热敏问题并改善功率密度。 公司还提供多种 IGBT 压模，专门设计用于中到高功率模块。 对于需要最大可靠性的模块，可使用可焊接前部金属 (SFM) 压模来消除连接线，从而实现双面冷却，提高热敏性能、可靠性和效率。
|
||
IRG4RC20FTRLPBF
|
International Rectifier | 完全替代 | TO-252 |
Trans IGBT Chip N-CH 600V 22A 66000mW 3Pin(2+Tab) DPAK T/R
|
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