Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 14.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 38 W
Technical parameters/product series: IRG4BC10SD-S
Technical parameters/rise time: 36.0 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 28 ns
Technical parameters/rated power (Max): 38 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 38000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/height: 4.703 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4BC10SD-S
|
Infineon | 完全替代 | TO-263-3 |
Trans IGBT Chip N-CH 600V 14A 3Pin (2+Tab) D2PAK
|
||
IRG4RC10SDTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
IGBT 晶体管 600V DC-1kHz
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review