Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 38 W
Technical parameters/product series: IRG4RC10SD
Technical parameters/rise time: 32.0 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 1.24 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STGD6NC60HDT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STGD6NC60HD 系列 N沟道 600 V 7 A 极快 PowerMESH IGBT - TO-252-3
|
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