Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 61.0 A
Technical parameters/drain source resistance: 8.60 mΩ
Technical parameters/product series: IRFZ48ZS
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/leakage source breakdown voltage: 55.0V (min)
Technical parameters/Continuous drain current (Ids): 61.0 A
Technical parameters/rise time: 69.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
International Rectifier | 类似代替 | TO-252-3 |
D2PAK N-CH 55V 61A
|
||
IRFZ48ZSPBF
|
International Rectifier | 类似代替 | TO-263-3 |
INFINEON IRFZ48ZSPBF 晶体管, MOSFET, N沟道, 61 A, 55 V, 0.0086 ohm, 10 V, 4 V 新
|
||
IRFZ48ZSPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRFZ48ZSPBF 晶体管, MOSFET, N沟道, 61 A, 55 V, 0.0086 ohm, 10 V, 4 V 新
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review