Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 61.0 A
Technical parameters/drain source resistance: 11 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 91 W
Technical parameters/product series: IRFZ48ZS
Technical parameters/input capacitance: 1720pF @25V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/Continuous drain current (Ids): 61.0 A
Technical parameters/rise time: 69.0 ns
Technical parameters/Input capacitance (Ciss): 1720pF @25V(Vds)
Technical parameters/rated power (Max): 91 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/height: 4.576 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
International Rectifier | 类似代替 | TO-252-3 |
D2PAK N-CH 55V 61A
|
||
IRFZ48ZS
|
International Rectifier | 类似代替 | TO-263 |
D2PAK N-CH 55V 61A
|
||
IRFZ48ZS
|
Infineon | 类似代替 | TO-263-3 |
D2PAK N-CH 55V 61A
|
||
STB55NF06T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
||
STB60NF06LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
|
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