Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Continuous drain current (Ids): 2.3A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD3N08LR2
|
ON Semiconductor | 功能相似 | SOIC |
功率MOSFET 2.3安培, 80伏 Power MOSFET 2.3 Amps, 80 Volts
|
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