Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 2.30 A
Technical parameters/drain source resistance: 215 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.10 W
Technical parameters/leakage source breakdown voltage: 80.0 V
Technical parameters/breakdown voltage of gate source: ±15.0 V
Technical parameters/Continuous drain current (Ids): 2.30 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD3N08LR2G
|
ON Semiconductor | 功能相似 | SOIC |
SOIC N-CH 80V 2.3A
|
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