Chip AI consultant
Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 50.0 A
Technical parameters/drain source resistance: 28.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 50.0 A
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Samsung | 功能相似 | SFM |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
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IRFZ44
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Motorola | 功能相似 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
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IRFZ44PBF
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Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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IRFZ44PBF
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VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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IRFZ44PBF
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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IRFZ44PBF
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Vishay Semiconductor | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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RFP50N06
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Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
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RFP50N06
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Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
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RFP50N06
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Freescale | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
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STP45NF06
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ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP45NF06 晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
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