Technical parameters/dissipated power: 94000 mW
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 185 ns
Technical parameters/Input capacitance (Ciss): 1900pF @25V(Vds)
Technical parameters/descent time: 165 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 150W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Samsung | 功能相似 | SFM |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
|
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IRFZ44
|
Motorola | 功能相似 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
|
|||
IRFZ44PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFZ44PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
|
IRFZ44PBF
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
|||
IRFZ44PBF
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
RFP50N06
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
|
||
RFP50N06
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
|
|||
RFP50N06
|
Freescale | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
|
||
STP45NF06
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP45NF06 晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
|
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