Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -8.80 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 42.0 W
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/leakage source breakdown voltage: -60.0 V
Technical parameters/Continuous drain current (Ids): -8.80 A
Technical parameters/rise time: 68.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: IPAK-3
External dimensions/foot length: 9.65 mm
External dimensions/packaging: IPAK-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU9014PBF
|
VISHAY | 功能相似 | TO-251-3 |
VISHAY IRFU9014PBF. 晶体管, MOSFET, P沟道, 5.6 A, -60 V, 500 mohm, -10 V, -4 V
|
||
IRFU9014PBF
|
Vishay Siliconix | 功能相似 | TO-251-3 |
VISHAY IRFU9014PBF. 晶体管, MOSFET, P沟道, 5.6 A, -60 V, 500 mohm, -10 V, -4 V
|
||
IRFU9014PBF
|
International Rectifier | 功能相似 |
VISHAY IRFU9014PBF. 晶体管, MOSFET, P沟道, 5.6 A, -60 V, 500 mohm, -10 V, -4 V
|
|||
IRFU9014PBF
|
Kersemi Electronic | 功能相似 |
VISHAY IRFU9014PBF. 晶体管, MOSFET, P沟道, 5.6 A, -60 V, 500 mohm, -10 V, -4 V
|
|||
IRFU9014PBF
|
Vishay Semiconductor | 功能相似 | TO-251-3 |
VISHAY IRFU9014PBF. 晶体管, MOSFET, P沟道, 5.6 A, -60 V, 500 mohm, -10 V, -4 V
|
||
IRFU9024NPBF
|
IFC | 功能相似 |
INFINEON IRFU9024NPBF 晶体管, MOSFET, P沟道, -11 A, -55 V, 175 mohm, -10 V, -4 V
|
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