Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.5 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): -5.10 A
Technical parameters/rise time: 63 ns
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 31 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/foot length: 9.65 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Kersemi Electronic | 功能相似 |
P-CHANNEL POWER MOSFETS
|
|||
IRFU9024NPBF
|
IFC | 功能相似 |
INFINEON IRFU9024NPBF 晶体管, MOSFET, P沟道, -11 A, -55 V, 175 mohm, -10 V, -4 V
|
|||
IRFU9024PBF
|
Vishay Semiconductor | 功能相似 | TO-251 |
VISHAY IRFU9024PBF 晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
|
||
IRFU9024PBF
|
International Rectifier | 功能相似 | IPAK-3 |
VISHAY IRFU9024PBF 晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review