Technical parameters/rated power: 43 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 600 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 43 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 300 pF
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 5A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/rated power (Max): 43 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 43W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.38 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU220
|
Vishay Semiconductor | 功能相似 | 3 |
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
|
||
IRFU220
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
|
|||
IRFU220PBF
|
VISHAY | 功能相似 | TO-251-3 |
VISHAY IRFU220PBF. 晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
|
||
|
|
LiteOn | 功能相似 | TO-251-3 |
VISHAY IRFU220PBF. 晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
|
||
IRFU220PBF
|
Vishay Siliconix | 功能相似 | TO-251-3 |
VISHAY IRFU220PBF. 晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
|
||
IRFU220PBF
|
International Rectifier | 功能相似 |
VISHAY IRFU220PBF. 晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
|
|||
IRFU220PBF
|
Vishay Semiconductor | 功能相似 | TO-251 |
VISHAY IRFU220PBF. 晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
|
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