Technical parameters/dissipated power: 2.5W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU210
|
VISHAY | 类似代替 | TO-251 |
MOSFET N-CH 200V 2.6A I-PAK
|
||
IRFU210PBF
|
International Rectifier | 类似代替 |
Trans MOSFET N-CH 200V 2.6A 3Pin(3+Tab) IPAK
|
|||
IRFU210PBF
|
Vishay Semiconductor | 类似代替 | TO-251 |
Trans MOSFET N-CH 200V 2.6A 3Pin(3+Tab) IPAK
|
||
IRFU220
|
Vishay Semiconductor | 功能相似 | 3 |
4.6A ， 200V ， 0.800 Ohm的N通道功率MOSFET 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
|
||
IRFU220
|
International Rectifier | 功能相似 |
4.6A ， 200V ， 0.800 Ohm的N通道功率MOSFET 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
|
|||
|
|
Kersemi Electronic | 功能相似 |
INFINEON IRFU220NPBF 晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
|
|||
|
IRFU220NPBF
|
IFC | 功能相似 |
INFINEON IRFU220NPBF 晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
|
|||
IRFU220NPBF
|
Infineon | 功能相似 | TO-251-3 |
INFINEON IRFU220NPBF 晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
|
||
IRFU220NPBF
|
International Rectifier | 功能相似 | TO-251-3 |
INFINEON IRFU220NPBF 晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
|
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