Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -5.30 A
Technical parameters/drain source voltage (Vds): 50.0 V
Technical parameters/leakage source breakdown voltage: -50.0 V
Technical parameters/Continuous drain current (Ids): 5.30 A
Technical parameters/rise time: 47.0 ns
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU9010
|
Vishay Siliconix | 功能相似 | TO-251-3 |
P-CHANNEL POWER MOSFETS
|
||
IRFU9010
|
VISHAY | 功能相似 | TO-251 |
P-CHANNEL POWER MOSFETS
|
||
IRFU9010
|
International Rectifier | 功能相似 |
P-CHANNEL POWER MOSFETS
|
|||
IRFU9010PBF
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 50V 5.3A I-PAK
|
|||
IRFU9010PBF
|
LiteOn | 完全替代 | TO-251-3 |
MOSFET P-CH 50V 5.3A I-PAK
|
||
IRFU9010PBF
|
International Rectifier | 完全替代 |
MOSFET P-CH 50V 5.3A I-PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review