Encapsulation parameters/Encapsulation: TO-251
External dimensions/packaging: TO-251
Other/FET types: P-Channel
Other/Vgs (maximum value): ±20V
Other/Rds On (Max) @ Id, Vgs: 500 mOhms @ 2.8A,10V
Other/continuous drain current Id: 5.3A(Tc)
Other/drain source voltage Vds: 50V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: TO-251AA
Other/Vgs (th): 4V @ 250uA
Other/Pd - power dissipation (Max): 25W(Tc)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU9010
|
Vishay Siliconix | 功能相似 | TO-251-3 |
P-CHANNEL POWER MOSFETS
|
||
IRFU9010
|
VISHAY | 功能相似 | TO-251 |
P-CHANNEL POWER MOSFETS
|
||
IRFU9010
|
International Rectifier | 功能相似 |
P-CHANNEL POWER MOSFETS
|
|||
IRFU9010PBF
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 50V 5.3A I-PAK
|
|||
IRFU9010PBF
|
LiteOn | 完全替代 | TO-251-3 |
MOSFET P-CH 50V 5.3A I-PAK
|
||
IRFU9010PBF
|
International Rectifier | 完全替代 |
MOSFET P-CH 50V 5.3A I-PAK
|
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