Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 36W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 1.40 A
Technical parameters/Input capacitance (Ciss): 229pF @25V(Vds)
Technical parameters/dissipated power (Max): 36W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU1N60APBF
|
Vishay Semiconductor | 完全替代 | TO-251 |
IRFU1N60APBF N-channel MOSFET Transistor, 1.4A, 600V, 3Pin TO-251
|
||
IRFU1N60APBF
|
Vishay Siliconix | 完全替代 | TO-251-3 |
IRFU1N60APBF N-channel MOSFET Transistor, 1.4A, 600V, 3Pin TO-251
|
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