Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -5.10 A
Technical parameters/rated power: 25 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.5 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 25 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: -60.0 V
Technical parameters/Continuous drain current (Ids): -5.10 A
Technical parameters/rise time: 63.0 ns
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9024NPBF
|
Infineon | 功能相似 | TO-252-3 |
P 通道功率 MOSFET 超过 8A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review