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Description P 通道功率 MOSFET 超过 8A,Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。
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Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.37  yuan 3.37yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8503) Minimum order quantity(1)
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Technical parameters/rated power:

38 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.175 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

38 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

350 pF

 

Technical parameters/drain source voltage (Vds):

55 V

 

Technical parameters/Continuous drain current (Ids):

11A

 

Technical parameters/rise time:

55 ns

 

Technical parameters/reverse recovery time:

47 ns

 

Technical parameters/forward voltage (Max):

1.6 V

 

Technical parameters/Input capacitance (Ciss):

350pF @25V(Vds)

 

Technical parameters/rated power (Max):

38 W

 

Technical parameters/descent time:

37 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/operating temperature:

-55℃ ~ 150℃

 

Technical parameters/dissipated power (Max):

38W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.39 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Pack

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