Technical parameters/rated power:
38 W
Technical parameters/number of pins:
3
Technical parameters/drain source resistance:
0.175 Ω
Technical parameters/polarity:
P-Channel
Technical parameters/dissipated power:
38 W
Technical parameters/threshold voltage:
4 V
Technical parameters/Input capacitance:
350 pF
Technical parameters/drain source voltage (Vds):
55 V
Technical parameters/Continuous drain current (Ids):
11A
Technical parameters/rise time:
55 ns
Technical parameters/reverse recovery time:
47 ns
Technical parameters/forward voltage (Max):
1.6 V
Technical parameters/Input capacitance (Ciss):
350pF @25V(Vds)
Technical parameters/rated power (Max):
38 W
Technical parameters/descent time:
37 ns
Technical parameters/operating temperature (Max):
150 ℃
Technical parameters/operating temperature (Min):
-55 ℃
Technical parameters/operating temperature:
-55℃ ~ 150℃
Technical parameters/dissipated power (Max):
38W (Tc)
Encapsulation parameters/installation method:
Surface Mount
Package parameters/number of pins:
3
Encapsulation parameters/Encapsulation:
TO-252-3
Dimensions/Length:
6.73 mm
Dimensions/Width:
6.22 mm
Dimensions/Height:
2.39 mm
Dimensions/Packaging:
TO-252-3
Physical parameters/materials:
Silicon
Physical parameters/operating temperature:
-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:
Not Recommended for New Designs
Other/Pack
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.
No questions have been asked yet
I'm not very familiar with the product yet. Just ask around
Alternative material
Model
Brand
Similarity
Encapsulation
Introduction
Data manual
AUIRFR9024N
International Rectifier
类似代替
TO-252-3
P 通道功率 MOSFET,Infineon Infineon 的全面 AECQ-101 汽车资格单芯片 N 通道设备组合可满足许多应用中的多种电源要求。 该分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
PDF
IRFR9024NTRLPBF
International Rectifier
完全替代
TO-252-3
HEXFET® P 通道功率 MOSFET,Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 P 通道设备,用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
PDF
IRFR9024NTRPBF
International Rectifier
类似代替
TO-252-3
INFINEON IRFR9024NTRPBF 场效应管, MOSFET, P沟道
PDF
IRFR9024NTRPBF
Infineon
类似代替
TO-252-3
INFINEON IRFR9024NTRPBF 场效应管, MOSFET, P沟道
PDF
IRFR9024NTRPBF
IFC
类似代替
INFINEON IRFR9024NTRPBF 场效应管, MOSFET, P沟道
IRFR9024NTRPBF
IFA
类似代替
INFINEON IRFR9024NTRPBF 场效应管, MOSFET, P沟道
PDF
×
My delivery address
Now
Log in It can be quickly located according to the delivery address
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Scroll
Comparison
The comparison bar is full. You can delete the items you don't need in the bar and then continue to add them
The most helpful review