Technical parameters/drain source resistance: 100 mΩ
Technical parameters/dissipated power: 2.5W (Ta), 42W (Tc)
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 640pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 完全替代 | TO-251 |
MOSFET N-CH 60V 14A I-PAK
|
||
IRFU020PBF
|
Vishay Siliconix | 完全替代 | TO-251-3 |
MOSFET N-CH 60V 14A I-PAK
|
||
IRFU020PBF
|
Vishay Semiconductor | 完全替代 | TO-251-3 |
MOSFET N-CH 60V 14A I-PAK
|
||
IRFU020PBF
|
LiteOn | 完全替代 | IPAK-3 |
MOSFET N-CH 60V 14A I-PAK
|
||
|
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 60V 14A I-PAK
|
|||
IRFU024
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 60V 14A I-PAK
|
|||
IRFU024
|
International Rectifier | 完全替代 |
MOSFET N-CH 60V 14A I-PAK
|
|||
IRFU024
|
Infineon | 完全替代 |
MOSFET N-CH 60V 14A I-PAK
|
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