Technical parameters/rise time: | 58 ns |
|
Technical parameters/Input capacitance (Ciss): | 640pF @25V(Vds) |
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Technical parameters/descent time: | 42 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-251 |
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Dimensions/Packaging: | TO-251 |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
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IRFU020
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VISHAY | 功能相似 | TO-251 |
Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
IRFU024PBF
|
Vishay Dale | 完全替代 |
MOSFET N-CH 60V 14A I-PAK
|
|||
IRFU024PBF
|
International Rectifier | 完全替代 | IPAK-3 |
MOSFET N-CH 60V 14A I-PAK
|
||
IRFU024PBF
|
Vishay Semiconductor | 完全替代 | TO-251-3 |
MOSFET N-CH 60V 14A I-PAK
|
||
IRFU024PBF
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 60V 14A I-PAK
|
|||
IRFU024PBF
|
Vishay Siliconix | 完全替代 | TO-251-3 |
MOSFET N-CH 60V 14A I-PAK
|
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