Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7.34 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/product series: IRFS3607
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/Input capacitance (Ciss): 3070pF @50V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3607PBF
|
International Rectifier | 完全替代 | TO-252-3 |
INFINEON IRFR3607PBF 晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 20 V, 4 V
|
||
IRFS3607TRLPBF
|
International Rectifier | 完全替代 | TO-263-3 |
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon
|
||
IRFU3607PBF
|
International Rectifier | 完全替代 | TO-251-3 |
INFINEON IRFU3607PBF 晶体管, MOSFET, N沟道, 56 A, 75 V, 7.34 mohm, 10 V, 4 V
|
||
STB140NF75T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STB140NF75 系列 N 沟道 75 V 0.0075 Ω 160 nC STripFET™II MosFet - D2PAK
|
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