Technical parameters/drain source resistance: 2.6 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 370 W
Technical parameters/product series: IRFS3107-7P
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 9200pF @50V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 260 A
Technical parameters/Input capacitance (Ciss): 9200pF @50V(Vds)
Technical parameters/rated power (Max): 370 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/length: 10.67 mm
External dimensions/height: 4.576 mm
External dimensions/packaging: TO-263-7
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB030N08N3GATMA1
|
Infineon | 类似代替 | TO-263-7 |
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB030N08N3GATMA1, 160 A, Vds=80 V, 7引脚 D2PAK (TO-263)封装
|
||
IRF2907ZS-7PPBF
|
International Rectifier | 类似代替 | TO-263-7 |
INFINEON IRF2907ZS-7PPBF 晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V
|
||
IRFS3107TRL7PP
|
International Rectifier | 完全替代 | TO-263-7 |
INFINEON IRFS3107TRL7PP 晶体管, MOSFET, N沟道, 260 A, 75 V, 0.0021 ohm, 10 V, 4 V 新
|
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