Technical parameters/rated power: 214 W
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.0025 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 214 W
Technical parameters/threshold voltage: 2.8 V
Technical parameters/input capacitance: 6100 pF
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Continuous drain current (Ids): 160A
Technical parameters/rise time: 79 ns
Technical parameters/Input capacitance (Ciss): 6100pF @40V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 214000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/length: 10 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.57 mm
External dimensions/packaging: TO-263-7
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS3107-7PPBF
|
Infineon | 类似代替 | TO-263-7 |
INFINEON IRFS3107-7PPBF 晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
|
||
IRFS3107-7PPBF
|
International Rectifier | 类似代替 | TO-263-7 |
INFINEON IRFS3107-7PPBF 晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review