Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 9.40 A
Technical parameters/product series: IRFR9N20D
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 9.40 A
Technical parameters/rise time: 16.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9N20DTRLPBF
|
International Rectifier | 类似代替 | DPAK-252 |
场效应管(MOSFET) IRFR9N20DTRLPBF DPAK
|
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IRFR9N20DTRPBF
|
Infineon | 类似代替 | TO-252-3 |
HEXFET® N 通道功率 MOSFET 最大 50A,Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备,用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
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