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Model IRFR9N20DTRPBF

Description HEXFET® N 通道功率 MOSFET 最大 50A，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。

Brand: Infineon

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(1980) Minimum order quantity(1)

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Technical parameters/rated power:	86 W
Technical parameters/number of channels:	1
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.38 Ω
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	86 W
Technical parameters/threshold voltage:	5.5 V
Technical parameters/Input capacitance:	560pF @25V
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Continuous drain current (Ids):	9.4A
Technical parameters/rise time:	16 ns
Technical parameters/Input capacitance (Ciss):	560pF @25V(Vds)
Technical parameters/rated power (Max):	86 W
Technical parameters/descent time:	9.3 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	86W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	7.49 mm
Dimensions/Height:	2.39 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

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IRFR9N20DTRLPBF	International Rectifier	完全替代	DPAK-252	场效应管(MOSFET) IRFR9N20DTRLPBF DPAK	PDF