Technical parameters/rated voltage (DC): -400 V
Technical parameters/rated current: -1.80 A
Technical parameters/rated power: 50 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 7 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: -400 V
Technical parameters/Continuous drain current (Ids): -1.80 A
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9310
|
VISHAY | 完全替代 | DPAK |
Trans MOSFET P-CH Si 400V 1.8A 3P DPAK
|
||
IRFR9310
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET P-CH Si 400V 1.8A 3P DPAK
|
||
IRFR9310TRLPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 400V 1.8A DPAK
|
||
IRFR9310TRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET P-CH 400V 1.8A DPAK
|
||
IRFR9310TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 400V 1.8A DPAK
|
||
IRFR9310TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 400V 1.8A DPAK
|
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