Technical parameters/rated voltage (DC): -400 V
Technical parameters/rated current: -1.80 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 50W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: -400 V
Technical parameters/Continuous drain current (Ids): 1.80 A
Technical parameters/rise time: 10.0 ns
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9310PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET P-CH 400V 1.8A 3Pin(2+Tab) DPAK
|
||
IRFR9310PBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
Trans MOSFET P-CH 400V 1.8A 3Pin(2+Tab) DPAK
|
||
IRFR9310PBF
|
LiteOn | 完全替代 | TO-252-3 |
Trans MOSFET P-CH 400V 1.8A 3Pin(2+Tab) DPAK
|
||
IRFR9310TRLPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 400V 1.8A DPAK
|
||
IRFR9310TRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET P-CH 400V 1.8A DPAK
|
||
IRFR9310TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 400V 1.8A DPAK
|
||
IRFR9310TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 400V 1.8A DPAK
|
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