Technical parameters/drain source resistance: 3 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 1.9A
Technical parameters/Input capacitance (Ciss): 170pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9210PBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 200V 1.9A DPAK
|
||
IRFR9210PBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 200V 1.9A DPAK
|
||
|
|
Vishay Intertechnology | 完全替代 | TO-252 |
Trans MOSFET P-CH 200V 1.9A 3Pin(2+Tab) DPAK T/R
|
||
IRFR9210TRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET P-CH 200V 1.9A 3Pin(2+Tab) DPAK T/R
|
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