Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -23.0 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 140W (Tc)
Technical parameters/product series: IRFP9140N
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: -100 V
Technical parameters/Continuous drain current (Ids): 23.0 A
Technical parameters/rise time: 67 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/descent time: 51 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
9-140
|
Cinch Connectivity Solutions | 功能相似 | Panel |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
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|
|
Agilent | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
9-140
|
AVAGO Technologies | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
|
9-140
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
|
9-140
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
|
9-140
|
FCI Electronics | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
|
9140
|
FCI Electronics | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
IRFP9140NPBF
|
Infineon | 类似代替 | TO-247-3 |
INFINEON IRFP9140NPBF 晶体管, MOSFET, P沟道, -23 A, -100 V, 117 mohm, -10 V, -4 V
|
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IRFP9140NPBF
|
International Rectifier | 类似代替 | TO-247-3 |
INFINEON IRFP9140NPBF 晶体管, MOSFET, P沟道, -23 A, -100 V, 117 mohm, -10 V, -4 V
|
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