Technical parameters/rated voltage (DC): | -100 V |
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Technical parameters/rated current: | -23.0 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 0.117 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 140 W |
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Technical parameters/product series: | IRFP9140N |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | -100 V |
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Technical parameters/Continuous drain current (Ids): | -23.0 A |
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Technical parameters/rise time: | 67.0 ns |
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Technical parameters/Input capacitance (Ciss): | 1300pF @25V(Vds) |
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Technical parameters/rated power (Max): | 140 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-247-3 |
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Dimensions/Length: | 15.87 mm |
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Dimensions/Width: | 5.31 mm |
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Dimensions/Height: | 20.7 mm |
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Dimensions/Packaging: | TO-247-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Rail, Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
9-140
|
Cinch Connectivity Solutions | 功能相似 | Panel |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
||
|
|
Agilent | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
9-140
|
AVAGO Technologies | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
|
9-140
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
|
9-140
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
|
9-140
|
FCI Electronics | 功能相似 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
|
|||
IRFP9140N
|
IRF | 类似代替 |
TO-247AC P-CH 100V 23A
|
|||
IRFP9140N
|
International Rectifier | 类似代替 | TO-247-3 |
TO-247AC P-CH 100V 23A
|
||
IRFP9140N
|
Infineon | 类似代替 | TO-247-3 |
TO-247AC P-CH 100V 23A
|
||
|
|
International Rectifier | 功能相似 |
功率MOSFET Power MOSFET
|
|||
IRFP9140PBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
功率MOSFET Power MOSFET
|
||
|
IRFP9140PBF
|
LiteOn | 功能相似 |
功率MOSFET Power MOSFET
|
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