Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 2.40 A
Technical parameters/rated power: 42 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 360pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 2.40 A
Technical parameters/rise time: 8.60 ns
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR420
|
Vishay Semiconductor | 功能相似 | TO-252 |
2.5A , 500V , 3.000 Ohm的N通道功率MOSFET 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs
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||
IRFR420
|
International Rectifier | 功能相似 | TO-252 |
2.5A , 500V , 3.000 Ohm的N通道功率MOSFET 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs
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||
|
|
Vishay Intertechnology | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR420PBF
|
Vishay Semiconductor | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR420PBF
|
VISHAY | 类似代替 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR420PBF
|
International Rectifier | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR420TRLPBF
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 2.4A I(D), 500V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
|
||
IRFR420TRLPBF
|
VISHAY | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 2.4A I(D), 500V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
|
||
IRFR420TRPBF
|
Infineon | 类似代替 | DPAK-252 |
VISHAY IRFR420TRPBF 晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
|
||
IRFR420TRPBF
|
Vishay Semiconductor | 类似代替 | TO-252 |
VISHAY IRFR420TRPBF 晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
|
||
IRFR420TRPBF
|
Vishay Siliconix | 类似代替 | TO-252-3 |
VISHAY IRFR420TRPBF 晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
|
||
IRFR420TRPBF
|
International Rectifier | 类似代替 | TO-252 |
VISHAY IRFR420TRPBF 晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
|
||
IRFR420TRPBF
|
Vishay Intertechnology | 类似代替 | DPAK-2 |
VISHAY IRFR420TRPBF 晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
|
||
STD3NK50ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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