Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 2.40 A
Technical parameters/rise time: 8.6 ns
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD4N50TM
|
Fairchild | 功能相似 | TO-252-3 |
N沟道 500V 2.6A
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||
STD3NK50ZT4
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ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
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