Technical parameters/dissipated power: 2.5W (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Input capacitance (Ciss): 170pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD3N40TM
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Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3N40TM 晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
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IRFR310
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Vishay Semiconductor | 功能相似 |
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Vishay Intertechnology | 功能相似 |
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IRFR310TRLPBF
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Vishay Siliconix | 功能相似 | TO-252-3 |
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IRFR310TRPBF
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Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET N-CH 400V 1.7A DPAK
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IRFR310TRPBF
|
Vishay Intertechnology | 功能相似 | TO-252-3 |
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