Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 1.70 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3.6 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/Continuous drain current (Ids): 1.70 A
Technical parameters/rise time: 9.90 ns
Technical parameters/Input capacitance (Ciss): 170pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2000
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD3N40TM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3N40TM 晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
|
||
IRFR310TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR310TRPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
功率MOSFET Power MOSFET
|
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