Technical parameters/dissipated power: 2.5W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 640pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR024TRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK T/R
|
||
IRFR024TRPBF
|
International Rectifier | 完全替代 | TO-252 |
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK T/R
|
||
IRFR024TRPBF
|
Kersemi Electronic | 完全替代 |
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK T/R
|
|||
STD12NF06LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD12NF06LT4 晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
|
||
STD12NF06T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD12NF06T4 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.08 ohm, 10 V, 3 V
|
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