Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/product series: IRFR1018E
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 79.0 mA
Technical parameters/Input capacitance (Ciss): 2290pF @50V(Vds)
Technical parameters/rated power (Max): 110 W
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/width: 6.22 mm
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFR1018ETRL
|
International Rectifier | 类似代替 | TO-252-3 |
DPAK N-CH 60V 79A
|
||
IRFR1018EPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR1018EPBF 晶体管, MOSFET, N沟道, 56 A, 60 V, 7.1 mohm, 20 V, 4 V
|
||
STD60N55F3
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 STripFET™ F3,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
||
STD70N6F3
|
ST Microelectronics | 功能相似 | TO-252-3 |
STD70N6F3 系列 60 V 10.5 mOhm N 沟道 STripFET™ III 功率 MOSFET - TO-252
|
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