Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 36.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 446 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 36.0 A
Technical parameters/rise time: 98.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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IXFH60N50P3
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IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH60N50P3 晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
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IXTH 36N50P
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IXYS Semiconductor | 功能相似 | TO-247 |
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