Technical parameters/drain source resistance: 1.6 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 190 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 6.7A
Technical parameters/rise time: 34 ns
Technical parameters/Input capacitance (Ciss): 2900pF @25V(Vds)
Technical parameters/rated power (Max): 190 W
Technical parameters/descent time: 37 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 190000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Packaging Methods: Tube
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK962-01
|
FUJI | 功能相似 |
N-Channel Silicon Power MOS-FET
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|||
|
|
Infineon | 类似代替 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
||
IRFPF50PBF
|
International Rectifier | 类似代替 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
||
IRFPF50PBF
|
Vishay Semiconductor | 类似代替 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
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