Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 6.70 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 190 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/Continuous drain current (Ids): 6.70 A
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK962-01
|
FUJI | 功能相似 |
N-Channel Silicon Power MOS-FET
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Infineon | 功能相似 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
||
IRFPF50PBF
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International Rectifier | 功能相似 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
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IRFPF50PBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
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