Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 11.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 180 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 11.0 A
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPC40PBF
|
VISHAY | 类似代替 | TO-247-3 |
N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
IRFPC50
|
VISHAY | 完全替代 | TO-247 |
MOSFET N-CH 600V 11A TO-247AC
|
||
IRFPC50
|
International Rectifier | 完全替代 | TO-247 |
MOSFET N-CH 600V 11A TO-247AC
|
||
IRFPC50
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 11A TO-247AC
|
|||
IRFPC50LCPBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
MOSFET N-CH 600V 11A TO-247AC
|
||
IXFH26N60Q
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH26N60Q 功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
|
||
STW10NK60Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW10NK60Z 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
|
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