Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 26.0 A
Technical parameters/rated power: 360 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 360 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 26.0 A
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 5100pF @25V(Vds)
Technical parameters/rated power (Max): 360 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 360W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/width: 5.3 mm
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/weight: 6 g
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Power Management, Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW20NM60FD
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics
|
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