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Model STW20NM60FD
Description N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics
Product QR code
Brand: ST Microelectronics
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
16.72  yuan 16.72yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5533) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

20.0 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.26 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

214 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

1.30 nF

 

Technical parameters/gate charge:

37.0 nC

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

20.0 A

 

Technical parameters/rise time:

12 ns

 

Technical parameters/Input capacitance (Ciss):

1300pF @25V(Vds)

 

Technical parameters/rated power (Max):

214 W

 

Technical parameters/descent time:

22 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

214W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

15.75 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

20.15 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Othe

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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