Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 46.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 55 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 280 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 46.0 A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 5200pF @25V(Vds)
Technical parameters/rated power (Max): 280 W
Technical parameters/descent time: 94 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 280W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.7 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 500
Other/Manufacturing Applications: Industrial, Power Management, Commercial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IFA | 功能相似 |
N 通道功率 MOSFET 50A 至 59A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRFP260PBF
|
Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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International Rectifier | 功能相似 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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IRFP260PBF
|
LiteOn | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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IRFP260PBF
|
VISHAY | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
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STW40NF20
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW40NF20 晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V
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