Technical parameters/rated voltage (DC): | 200 V |
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Technical parameters/rated current: | 46.0 A |
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Technical parameters/polarity: | N-Channel |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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IFA | 功能相似 |
N 通道功率 MOSFET 50A 至 59A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRFP260PBF
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Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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International Rectifier | 功能相似 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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IRFP260PBF
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LiteOn | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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IRFP260PBF
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VISHAY | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 46A I(D), 200V, 0.055Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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STW40NF20
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ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW40NF20 晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V
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