Technical parameters/drain source resistance: 0.32 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 330 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 21.0 A
Technical parameters/rise time: 58 ns
Technical parameters/Input capacitance (Ciss): 4000pF @25V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 330000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.82 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP21N60L
|
International Rectifier | 类似代替 |
MOSFET N-CH 600V 21A TO-247AC
|
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IRFP21N60LPBF
|
Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
||
IRFP21N60LPBF
|
Vishay Semiconductor | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
||
IRFP21N60LPBF
|
Vishay Intertechnology | 功能相似 | TO-247 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
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