Technical parameters/dissipated power: | 330000 mW |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/rise time: | 58 ns |
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Technical parameters/Input capacitance (Ciss): | 4000pF @25V(Vds) |
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Technical parameters/rated power (Max): | 330 W |
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Technical parameters/descent time: | 10 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 330W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-247-3 |
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Dimensions/Packaging: | TO-247-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP21N60L
|
International Rectifier | 类似代替 |
MOSFET N-CH 600V 21A TO-247AC
|
|||
IRFP21N60LPBF
|
Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
||
IRFP21N60LPBF
|
Vishay Semiconductor | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
||
IRFP21N60LPBF
|
Vishay Intertechnology | 功能相似 | TO-247 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
|
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