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Model IRFI620G
Description MOSFET N-CH 200V 4.1A TO220FP
Product QR code
Brand: Vishay Siliconix
Packaging TO-220-3
Delivery time
Packaging method
Standard packaging quantity 1
46.92  yuan 46.92yuan
1+:
$ 57.2412
10+:
$ 53.9569
100+:
$ 51.5171
250+:
$ 51.1417
500+:
$ 50.7664
1000+:
$ 50.3441
2500+:
$ 49.9687
5000+:
$ 49.7341
Quantity
1+
10+
100+
250+
500+
Price
$57.2412
$53.9569
$51.5171
$51.1417
$50.7664
Price $ 57.2412 $ 53.9569 $ 51.5171 $ 51.1417 $ 50.7664
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8709) Minimum order quantity(1)
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Technical parameters/dissipated power: 30W (Tc)

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)

Technical parameters/dissipated power (Max): 30W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFI620G IRFI620G International Rectifier 功能相似
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PDF
IRFI620G IRFI620G Vishay Siliconix 功能相似 TO-220-3
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PDF
IRFI620GPBF IRFI620GPBF LiteOn 完全替代 TO-220-3
MOSFET N-CH 200V 4.1A TO220FP
IRFI620GPBF IRFI620GPBF Vishay Intertechnology 完全替代 TO-220
MOSFET N-CH 200V 4.1A TO220FP
PDF
IRFI620GPBF IRFI620GPBF VISHAY 完全替代 TO-220-3
MOSFET N-CH 200V 4.1A TO220FP
PDF
IRFI620GPBF IRFI620GPBF Vishay Semiconductor 完全替代 TO-220
MOSFET N-CH 200V 4.1A TO220FP
PDF

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